050-7123 rev b 12-2003 maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com g d s power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switchinglosses are addressed with power mos 7 ? by significantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt'spatented metal gate structure. power mos 7 r fredfet lower input capacitance increased power dissipation lower miller capacitance easier to drive lower gate charge, qg popular to-264 max package fast recovery body diode apt12040l2fll 1200v 30a 0.400 ? ? characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, 15a) zero gate voltage drain current (v ds = 1200v, v gs = 0v) zero gate voltage drain current (v ds = 960v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 5ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms ana volts min typ max 1200 0.40 250 1000 100 35 apt12040l2fll 1200 30 120 3040 893 7.14 -55 to 150 300 3050 3200 to-264 max downloaded from: http:///
dynamic characteristics 050-7123 rev b 12-2003 apt12040l2fll source-drain diode ratings and characteristics thermal characteristics characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -30a) peak diode recovery dv / dt 5 reverse recovery time(i s = -30a, di / dt = 100a/s) reverse recovery charge(i s = -30a, di / dt = 100a/s) peak recovery current(i s = -30a, di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps min typ max 30 120 1.3 18 t j = 25c 375 t j = 125c 860 t j = 25c 2.0 t j = 125c 9.0 t j = 25c 15 t j = 125c 28 symbol r jc r ja min typ max 0.14 40 unitc/w characteristicjunction to case junction to ambient 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 7.11mh, r g = 25 , peak i l = 30a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - 30a di / dt 700a/s v r 1200 t j 150 c 6 eon includes diode reverse recovery. see figures 18, 20. apt reserves the right to change, without notice, the specifications and information contained herein. symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energyturn-on switching energy 6 turn-off switching energy min typ max 72471102 200275 32 179 2114 67 24 12651147 2293 1411 unit pf nc ns j test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 600v i d = 30a @ 25c resistive switching v gs = 15v v dd = 600v i d = 30a @ 25c r g = 0.6 inductive switching @ 25c v dd = 800v, v gs = 15v i d = 30a, r g = 5 inductive switching @ 125c v dd = 800v, v gs = 15v i d = 30a, r g = 5 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.160.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0.5 0.1 0.3 0.7 0.9 0.05 downloaded from: http:///
050-7123 rev b 12-2003 typical performance curves apt12040l2fll r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 5v 6v 5.5v 4.5v v gs =15 & 10v v gs =10v v gs =20v t j = +125c t j = +25c t j = -55c v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature 7v 0 5 10 15 20 25 30 01 2 3 4 5 6 7 0 10 20 30 40 50 60 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 8070 60 50 40 30 20 10 0 3025 20 15 10 50 2.52.0 1.5 1.0 0.5 0.0 i d = 15a v gs = 10v normalized to v gs = 10v @ 15a 7060 50 40 30 20 10 0 1.401.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 0.85 1.21.1 1.0 0.9 0.8 0.7 0.6 0.05090.0894 0.0522f0.988f power (watts) rc model junctiontemp. ( c) case temperature. ( c) downloaded from: http:///
050-7123 rev b 12-2003 apt12040l2fll c rss c iss c oss v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 10 100 1200 0 10 20 30 40 50 0 50 100 150 200 250 300 350 400 0.3 0.5 0.7 0.9 1.1 1.3 1.5 120 5010 51 1612 84 0 t c =+25c t j =+150c single pulse 10ms 1ms 100s t j =+150c t j =+25c i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 800v r g = 5 t j = 125c l = 100h e on e off t r t f switching energy ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) 5 10 15 20 25 30 35 40 45 50 5 10 15 20 25 30 35 40 45 50 5 10 15 20 25 30 35 40 4550 0 5 101520253035404550 v dd = 800v i d = 30a t j = 125c l = 100h e on includes diode reverse recovery. v ds = 600v v ds = 240v v ds = 960v i d = 30a t d(on) t d(off) e on e off 300250 200 150 100 50 0 40003500 3000 2500 2000 1500 1000 500 0 v dd = 800v r g = 5 t j = 125c l = 100h v dd = 800v r g = 5 t j = 125c l = 100h e on includes diode reverse recovery. 30,00010,000 1000 100200 100 10 1 operation here limited by r ds (on) 9080 70 60 50 40 30 20 10 0 90008000 7000 6000 5000 4000 3000 2000 1000 0 downloaded from: http:///
050-7123 rev b 12-2003 typical performance curves apt12040l2fll apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. figure 18, turn-on switching waveforms and definitions figure 19, turn-off switching waveforms and definitions 90% 90% 10% 0 t f t d(off) switching energy drain current drain voltage gate voltage t j = 125 c i c d.u.t. apt30df120 v ce figure 20, inductive switching test circuit g v dd switching energy gate voltage drain current drain voltage t j = 125 c 5 % 10 % t d(on) 5 % t r 90% 10 % 19.51 (.768) 20.50 (.807) 19.81 (.780) 21.39 (.842) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030) 1.30 (.051) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019) 0.84 (.033) drain source gate dimensions in millimeters and (inches) drain 2.29 (.090) 2.69 (.106) 5.79 (.228) 6.20 (.244) 2.79 (.110) 3.18 (.125) 5.45 (.215) bsc 2-plcs. to-264 max tm (l2) package outline downloaded from: http:///
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